The respective transfer characteristics of the ultrathin body (UTB) and gate recessed channel (GRC) device, sharing same W/L\nratio but having a channel thickness of 46 nm, and 2.2nm respectively, were measured at 300K and at 77K. By decreasing the\ntemperature we found that the electrical behaviors of these devices were radically opposite: if for UTB device, the conductivity was\nincreased, the opposite effect was observed for GRC. The low field electron mobility and series resistance RSD values were extracted\nusing a method based on Y-function for both the temperatures. If RSD low values were found for UTB, very high values (>1M?)\nwere extracted for GRC. Surprisingly, for the last device, the effective field mobility is found very low (<1 cm2/Vs) and is decreasing\nby lowering the temperature. After having discussed the limits of this analysis.This case study illustrates the advantage of the Yanalysis\nin discriminating a parameter of great relevance for nanoscale devices and gives a coherent interpretation of an anomalous\nelectrical behavior.
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